WTBV53DM(r) / wti53d power transistor winsem technology corp. page 1 version a12 high voltage npn transistor to-126 to-126 r pin definition pin definition 1. emitter 1. base 2. collector 2. collector 3. base 3. emitter features ? high voltage ? very high switch speed ? bv ceo : 400v ? bv cbo : 800v ? i c : 2.5a ? v ce ( sat ) : max1v@i c / i b =1a/ 0.25a ? silicon triple diffused type application ? electronic ballasts ? adapter ? lighting absolute maximum ratings ( tc = 25 ) parameter symbol max rating unit collector-base voltage vcbo 800 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 9 v collector current(dc) ic 2.5 a collector current(pulse) icp 5 a total power dissipation(to126) pd 20 w total power dissipation(to251) 30 junction temperature tj 150 operating junction and storage te mperature range tstg -55 ~ + 150
WTBV53DM(r) / wti53d power transistor winsem technology corp. page 2 version a12 electrical character istics ( tc = 25 ) parameter symbol test condition min typ max unit collector-base voltage bvcbo ic = 1ma, ib=0 800 v collector-emitter brea kdown voltage bvceo ic = 10ma, ie=0 400 v emitter- base breakdown voltage bvebo ie = 1ma, ic=0 9 v collector cutoff current icb o vcb = 700v, ie=0 1 ? emitter cutoff current iebo veb = 9v, ic=0 1 ? dc current gain hfe1 vce = 5v, ic=500ma 25 hfe2 vce = 5v, ic=1a 15 30 hfe3 vce = 5v, ic=2a 5 collector-emitter sa turation voltage vce(sat1) ic/ib = 0.5a / 0.1a 0.5 v vce(sat2) ic/ib = 1a / 0.25a 1 base-emitter saturation voltage vbe(sat1) ic/ib = 0.5a / 0.1a 1.2 v vbe(sat2) ic/ib = 1a / 0.25a 1.4 resistive load switching time (ratings) rise time t r vcc=250v, ic=1a, ib1 = ib2 = 0.2 a , tp = 25us duty cycle Q 1% 0.8 us storage time t stg 3 6 us fall time t f 0.2 0.7 us
WTBV53DM(r) / wti53d power transistor winsem technology corp. page 3 version a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. vce(sat) v.s. vbe(sat) figure 4. power derating figure 5. reverse bias soa figure 6. safety operating area
WTBV53DM (r) / wti53d power transistor winsem technology corp. page 4 version a12 ordering information type no marking package code WTBV53DM bv53dm to-126 WTBV53DMr bv53dm to-126r marking and pin define first line wtc company name second line bv53dm product code third line c c 0 t m 1st (year code) a-2010 b-2011 c-2012 2nd (month code) a-jan, b-feb, c-mar, d-apr, e-may, f-jun, g-jul, h-aug, i-sep, j-oct, k-n ov, l-dec 3rd (lot code) 0~9 , a~z 4th (product code) m - mos , t - trans istor, l - linear 5th (package code) i - to251, d - to252 , l - to92, m - to126, x - to220, f - to220f, y - sot89, s - sop8 6th (spec code) (reserve) to-126 package dimension
WTBV53DM(r) / wti53d power transistor winsem technology corp. page 5 version a12 to-251 dimension dim millimeters inches min max min max a 2.19 2.38 0.086 0.094 a1 0.89 1.14 0.035 0.045 b 0.64 0.89 0.025 0.035 b1 0.76 1.14 0.030 0.045 b2 5.21 5.46 0.205 0.215 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.10 0.235 0.240 e 6.35 6.73 0.250 0.265 e 2.28 bsc. 0.90 bsc. l 8.89 9.65 0.350 0.380 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ordering information type no marking package code wti53d 53di to-251 marking and pin define first line wtc company name second line 53di product code third line c c 0 t i 1st (year code) a-2010 b-2011 c-2012 2nd (month code) a-jan, b-feb, c-mar, d-apr, e-may, f-jun, g-jul, h-aug, i-sep, j-oct, k-n ov, l-dec 3rd (lot code) 0~9 , a~z 4th (product code) m - mos , t - transistor, l - linear 5th (package code) i - to251, d - to252 , l - to92, m - to126, x - to220, f - to220f, y - sot89, s - sop8 6th (spec code) (reserve) to-251 package dimension
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